NSN 5961-01-027-8749
Part Details | TRANSISTOR
5961-01-027-8749 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 8022271, 802227-1, 79SE187, 5961-01-027-8749, 01-027-8749, 5961010278749, 010278749
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | SEP 20, 1976 | 01-027-8749 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-027-8749
Part Number | Cage Code | Manufacturer |
---|---|---|
802227-1 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
79SE187 | 21845 | SOLITRON DEVICES, INC. |
Technical Data | NSN 5961-01-027-8749
Characteristic | Specifications |
---|---|
SEMICONDUCTOR MATERIAL | SILICON |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 170.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 170.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
CURRENT RATING PER CHARACTERISTIC | EE16.00 AMPERES MAXIMUM |
POWER RATING PER CHARACTERISTIC | AF200.0 WATTS MAXIMUM |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
INCLOSURE MATERIAL | METAL |
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-3 |
MOUNTING METHOD | UNTHREADED HOLE |
MOUNTING FACILITY QUANTITY | 2 |
TERMINAL LENGTH | 0.312 INCHES MINIMUM |
TERMINAL TYPE AND QUANTITY | 2 PIN AND 1 CASE |
OVERALL LENGTH | 1.573 INCHES MAXIMUM |
OVERALL HEIGHT | 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM |
OVERALL WIDTH | 1.050 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
SPECIAL FEATURES | BURN-IN TEST REQUIREMENTS; JUNCTION PATTERN ARRANGEMENT: NPN |