NSN 5961-00-104-5855

Part Details | TRANSISTOR

5961-00-104-5855 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N4221A, 2N4221, 2N4221, RELEASE5238, 2N4221, 2N4221, JAN2N4221, 2N4221, 3520740020, 352-0740-020, 2N4221, 5961-00-104-5855, 00-104-5855, 5961001045855, 001045855

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JUN 26, 196800-104-585520588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-104-5855
Part Number Cage Code Manufacturer
2N4221AC7191ADELCO ELEKTRONIK GMBH
2N4221C7191ADELCO ELEKTRONIK GMBH
2N422193916CRAMER PRODUCTS CO
RELEASE523880131ELECTRONIC INDUSTRIES ASSOCIATION
2N422180131ELECTRONIC INDUSTRIES ASSOCIATION
2N422104713FREESCALE SEMICONDUCTOR, INC.
JAN2N422181349MILITARY SPECIFICATIONSPROMULGATED BY MILITARY
2N422127014NATIONAL SEMICONDUCTOR CORPORATION
352-0740-02013499ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS
2N422117856SILICONIX INCORPORATEDDIV SILICONIX
Technical Data | NSN 5961-00-104-5855
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC30.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
CURRENT RATING PER CHARACTERISTICAD15.00 MILLIAMPERES MAXIMUM AND AK10.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAG300.0 MILLIWATTS MAXIMUM
INCLOSURE MATERIAL METAL
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY4 UNINSULATED WIRE LEAD
OVERALL LENGTH0.210 INCHES MAXIMUM
OVERALL DIAMETER0.230 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE