NSN 5961-00-103-7769
Part Details | TRANSISTOR
5961-00-103-7769 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: JANTX2N2907A, 200681006, 200681-006, 324990020829, 324-990020-829, JANTX2N2907, MILS19500291, MILS19500-291, JAN2N2907AJTX, 5314401, 531440-1, 5961-00-103-7769, 00-103-7769, 5961001037769, 001037769
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUN 12, 1968 | 00-103-7769 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-103-7769
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| JANTX2N2907A | C7191 | ADELCO ELEKTRONIK GMBH |
| 200681-006 | 81413 | BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION I |
| 324-990020-829 | 38753 | CMC ELECTRONICS INC |
| JANTX2N2907 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| MILS19500-291 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JAN2N2907AJTX | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 531440-1 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-00-103-7769
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| INTERNAL JUNCTION CONFIGURATION | PNP |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.210 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |