NSN 5961-00-103-7676

Part Details | TRANSISTOR

5961-00-103-7676 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: RELEASE5174, 2N3962, 2N3962, 7340229001, 734-022-9001, 2N3962, 2N3962, 2N3962, 5961-00-103-7676, 00-103-7676, 5961001037676, 001037676

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JUN 12, 196800-103-767620588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-103-7676
Part Number Cage Code Manufacturer
RELEASE517480131ELECTRONIC INDUSTRIES ASSOCIATION
2N396280131ELECTRONIC INDUSTRIES ASSOCIATION
2N396207263FAIRCHILD SEMICONDUCTOR CORP
734-022-900170210HONEYWELL INTERNATIONAL INC.DBA HONEYWELL
2N396202929NEWARK ELECTRONICS CORPORATIONDBA NEWARK
2N396231338SEMITRONICS CORP
2N3962A3500SGS MICROELETTRONICA SPA
Technical Data | NSN 5961-00-103-7676
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAC200.00 MILLIAMPERES MAXIMUM AND AE1.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB360.0 MILLIWATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
MOUNTING METHOD TERMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL DIAMETER0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: PNP