NSN 5961-00-103-7417

Part Details | DIODE SEMICONDUCTOR DEVICE

5961-00-103-7417 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.

Alternate Parts: 1N823A, 1N823, 101000313, 1N823, 1N823, 183422019, 1834220-19, 861647, 183422019, 1834220-19, 1N823, 861647, GEE25320E62, GEE25320E6-2, AE0122278, 5961-00-103-7417, 00-103-7417, 5961001037417, 001037417

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JUN 12, 196800-103-741720589 ( SEMICONDUCTOR DEVICE, DIODE )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-103-7417
Part Number Cage Code Manufacturer
1N823AC7191ADELCO ELEKTRONIK GMBH
1N823C7191ADELCO ELEKTRONIK GMBH
10100031334984DATA GENERAL CORPM/S 9S17
1N82304713FREESCALE SEMICONDUCTOR, INC.
1N82303877GILBERT ENGINEERING CO INC/INCONSUB OF TRANSITRON ELECTRONIC CORP
1834220-1955973HONEYWELL INTL INCDEFENSE AVIONICS SYSTEMS
8616471PQF4L3 TECHNOLOGIES, INC.DBA LINK SIMULATION & TRAINING
1834220-191NZ85L3 TECHNOLOGIES, INC.DBA SPACE AND NAVIGATION
1N82312954MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI
86164736378RAYTHEON TECHNICAL SERVICES COMPANY
GEE25320E6-2D0894ROHDE & SCHWARZ GMBH & CO. KG
AE0122278D0894ROHDE & SCHWARZ GMBH & CO. KG
Technical Data | NSN 5961-00-103-7417
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC6.2 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENTM5.0/P5.0
CURRENT RATING PER CHARACTERISTICAS7.50 MILLIAMPERES NOMINAL
POWER RATING PER CHARACTERISTICAG250.0 MILLIWATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT125.0 DEG CELSIUS AMBIENT AIR
INCLOSURE MATERIAL GLASS
MOUNTING METHOD TERMINAL
TERMINAL LENGTH1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD
OVERALL LENGTH0.265 INCHES NOMINAL
OVERALL DIAMETER0.096 INCHES NOMINAL
FUNCTION FOR WHICH DESIGNED ZENER DIODE
FEATURES PROVIDED HERMETICALLY SEALED CASE