NSN 5961-00-103-6748

Part Details | TRANSISTOR

5961-00-103-6748 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: A485, K2127, A433841, A43384-1, SRF518, 82101194, 8210-1194, 82101194, 8210-1194, A485, K2127, 151021200, 151-0212-00, 5961-00-103-6748, 00-103-6748, 5961001036748, 001036748

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JUN 19, 196800-103-674820588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-103-6748
Part Number Cage Code Manufacturer
A48573445AMPEREX ELECTRONIC CORP
K212796341COBHAM ADVANCED ELECTRONIC SOLUTIONSINC.
A43384-142498DAR ELECTRONICS INCDBA NATIONAL RADIO CO
SRF51804713FREESCALE SEMICONDUCTOR, INC.
8210-119424655GENRAD INC
8210-119462015IET LABS., INC.DBA IET LABS
A48525403PHILIPS CIRCUIT ASSEMBLIES
K2127DG438SEMIC RF ELECTRONIC GMBH
151-0212-0080009TEKTRONIX, INC.DBA TEKTRONIX
Technical Data | NSN 5961-00-103-6748
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 12.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 2.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
POWER RATING PER CHARACTERISTICAB0.2 WATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY4 UNINSULATED WIRE LEAD
OVERALL LENGTH0.210 INCHES MAXIMUM
OVERALL DIAMETER0.230 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: NPN