NSN 5961-00-103-1669
Part Details | TRANSISTOR
5961-00-103-1669 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: RELEASE5543, 2N5034, 0N129479, 2N5034, 5961-00-103-1669, 00-103-1669, 5961001031669, 001031669
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUN 12, 1968 | 00-103-1669 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-103-1669
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| RELEASE5543 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N5034 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 0N129479 | 98230 | NATIONAL SECURITY AGENCY |
| 2N5034 | 54590 | RCA CORPDISTRIBUTION AND SPECIAL PRODUCTS |
Technical Data | NSN 5961-00-103-1669
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 55.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC6.00 AMPERES MAXIMUM AND AB12.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB83.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 165.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | PLASTIC |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 1 CASE AND 2 PIN |
| OVERALL LENGTH | 0.890 INCHES NOMINAL |
| OVERALL HEIGHT | 0.160 INCHES NOMINAL |
| OVERALL WIDTH ACROSS FLATS | 0.460 INCHES NOMINAL |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |