NSN 5961-00-102-9910
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-102-9910 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 81978231, 819782-31, 81978231, 819782-31, 1N486B, 1N486B, 1N486B, 1N486B, 101012403, 10101240-3, 5961-00-102-9910, 00-102-9910, 5961001029910, 001029910
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | JUN 12, 1968 | 00-102-9910 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-102-9910
Part Number | Cage Code | Manufacturer |
---|---|---|
819782-31 | 83298 | ALLIED SIGNAL INCAEROSPACE EQUIPMENT SYSTEMS |
819782-31 | 64547 | HONEYWELL INTERNATIONAL INCDBA HONEYWELL |
1N486B | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
1N486B | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
1N486B | 15818 | TELCOM SEMICONDUCTOR INC |
1N486B | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
10101240-3 | 18876 | U S ARMY AVIATION AND MISSILECOMMAND |
Technical Data | NSN 5961-00-102-9910
Characteristic | Specifications |
---|---|
SEMICONDUCTOR MATERIAL | SILICON |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 250.0 MAXIMUM REVERSE VOLTAGE, PEAK |
CURRENT RATING PER CHARACTERISTIC | CH1.00 MICROAMPERES MAXIMUM |
POWER RATING PER CHARACTERISTIC | AF250.0 MILLIWATTS MAXIMUM |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS AMBIENT AIR |
INCLOSURE MATERIAL | GLASS |
MOUNTING METHOD | TERMINAL |
TERMINAL LENGTH | 1.000 INCHES MINIMUM |
TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 0.300 INCHES MAXIMUM |
OVERALL DIAMETER | 0.125 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |