NSN 5961-00-102-0367
Part Details | TRANSISTOR
5961-00-102-0367 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N4347, 2N4347A, 417402232000, 417/4/02232/000, 207236, 2N4347, 2N4347, 417402232000, 417/4/02232/000, 9324013134, 9324-013134, 5919, 2N4347, 2N4347, 2N4347, 2N4347, 2N4347, 2N4347, 2N4347, 2N4347, 468094, 2N4347, 2N4347, 5961-00-102-0367, 00-102-0367, 5961001020367, 001020367
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUN 03, 1968 | 00-102-0367 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-102-0367
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N4347 | C7191 | ADELCO ELEKTRONIK GMBH |
| 2N4347A | C7191 | ADELCO ELEKTRONIK GMBH |
| 417/4/02232/000 | K3902 | BAE SYSTEMS MARITIME SERVICES |
| 207236 | 08904 | CONRAC SYSTEMS INC |
| 2N4347 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N4347 | 34156 | FALKOR PARTNERS, LLCDBA SEMICOA |
| 417/4/02232/000 | U4290 | G E C MARCONI S3I LTD COMBAT SYSTEMSIVISION |
| 9324-013134 | D0290 | GMC-I MESSTECHNIK GMBHDIV GMC-I GOSSEN-METRAWATT GMBH |
| 5919 | 92878 | HDT EXPEDITIONARY SYSTEMS, INC. |
| 2N4347 | 07595 | HUG ELECTRONICS CORP |
| 2N4347 | 1MY79 | INTERSIL COMMUNICATIONS INC. |
| 2N4347 | K0331 | INTERSIL CORPORATION |
| 2N4347 | 34371 | INTERSIL CORPORATIONDIV NA |
| 2N4347 | 49675 | RCA CORP GOVERNMENT AND COMMERCIALSYSTEMS COMMERCIAL COMMICATIONS |
| 2N4347 | 07256 | SILICON TRANSISTOR CORPSUB OF BBF INC |
| 2N4347 | 30043 | SOLID STATE DEVICES, INC. |
| 2N4347 | 21845 | SOLITRON DEVICES, INC. |
| 468094 | F0057 | THALES COMMUNICATIONS & SECURITYS.A.S |
| 2N4347 | K0004 | VISHAY |
| 2N4347 | 05277 | WESTINGHOUSE ELECTRIC CORPSEMICONDUCTOR DIV |
Technical Data | NSN 5961-00-102-0367
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 140.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC5.00 AMPERES MAXIMUM AND AB3.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB100.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 1 CASE AND 2 PIN |
| OVERALL LENGTH | 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.875 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |