NSN 5961-00-100-5165
Part Details | TRANSISTOR
5961-00-100-5165 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 351A7, 657913, 40255, 657913, 5961-00-100-5165, 00-100-5165, 5961001005165, 001005165
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAY 31, 1968 | 00-100-5165 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-100-5165
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 351A7 | 08225 | INDUSTRO TRANSISTOR CORP |
| 657913 | 1PQF4 | L3 TECHNOLOGIES, INC.DBA LINK SIMULATION & TRAINING |
| 40255 | 49671 | LOCKHEED MARTIN CORPORATIONDBA LOCKHEED MARTIN |
| 657913 | 36378 | RAYTHEON TECHNICAL SERVICES COMPANY |
Technical Data | NSN 5961-00-100-5165
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| INTERNAL JUNCTION CONFIGURATION | NPN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 450.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 350.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AB0.50 AMPERES MAXIMUM AND AC1.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB10.0 WATTS MAXIMUM |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL LENGTH | 0.430 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.330 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.375 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |