NSN 5961-00-099-4428

Part Details | TRANSISTOR

5961-00-099-4428 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N2907A, 2N2907, DMS 85030B, 185064121, 18506412-1, N1859163, N185916-3, 2N2907A, 2N2907, 5961-00-099-4428, 00-099-4428, 5961000994428, 000994428

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59DEC 06, 197200-099-442820588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-099-4428
Part Number Cage Code Manufacturer
2N2907AC7191ADELCO ELEKTRONIK GMBH
2N2907C7191ADELCO ELEKTRONIK GMBH
DMS 85030B16236DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL
18506412-1F6151SAFRAN
N185916-3K4358SAFRAN ELECTRICAL & POWER UK LTD
2N2907AU3158SEMELAB LIMITED
2N290701295TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS
Technical Data | NSN 5961-00-099-4428
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION PNP
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAC600.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAF400.0 MILLIWATTS MAXIMUM
INCLOSURE MATERIAL METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATIONT0-18
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.210 INCHES MAXIMUM
OVERALL DIAMETER0.195 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE