NSN 5961-00-097-6650

Part Details | TRANSISTOR

5961-00-097-6650 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 3N126, RELEASE5181, 3N126, 3N126, 3N126, 3N126, 5961-00-097-6650, 00-097-6650, 5961000976650, 000976650

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59MAY 22, 196800-097-665020588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-097-6650
Part Number Cage Code Manufacturer
3N12652333API ELECTRONICS, INC.DBA API TECHNOLOGIES CORP
RELEASE518180131ELECTRONIC INDUSTRIES ASSOCIATION
3N12680131ELECTRONIC INDUSTRIES ASSOCIATION
3N126D5589FEINMECHANISCHE WERKE MAINZ GMBH
3N12604713FREESCALE SEMICONDUCTOR, INC.
3N126D9893LIEBHERR-AEROSPACE LINDENBERG GMBH
Technical Data | NSN 5961-00-097-6650
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC50.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
CURRENT RATING PER CHARACTERISTICAD20.00 MILLIAMPERES MAXIMUM AND AK20.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAG300.0 MILLIWATTS MAXIMUM
INCLOSURE MATERIAL METAL
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY4 UNINSULATED WIRE LEAD
OVERALL LENGTH0.210 INCHES MAXIMUM
OVERALL DIAMETER0.230 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIFICATION/STANDARD DATA80131-RELESE5181 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION