NSN 5961-00-094-1464
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-094-1464 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N3345RB, 1N3345RB, 1N3345RB, 1N3345RB, 4532891, 453289-1, 4532891, 453289-1, 4532891, 453289-1, 5961-00-094-1464, 00-094-1464, 5961000941464, 000941464
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 06, 1972 | 00-094-1464 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-094-1464
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N3345RB | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 1N3345RB | 43611 | MICROSEMI CORP.- MASSACHUSETTSDBA MICROSEMI-LAWRENCE |
| 1N3345RB | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| 1N3345RB | 5V1P1 | ON SEMICONDUCTOR CORPORATION |
| 453289-1 | 54X10 | RAYTHEON COMPANYDBA RAYTHEON |
| 453289-1 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 453289-1 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-00-094-1464
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 140.0 MAXIMUM NOMINAL REGULATOR VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | AS90.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AG50.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | THREADED STUD |
| MOUNTING FACILITY QUANTITY | 1 |
| THREAD SERIES DESIGNATOR | UNF |
| NOMINAL THREAD SIZE | 0.250 INCHES |
| TERMINAL TYPE AND QUANTITY | 1 TAB, SOLDER LUG AND 2 THREADED STUD |
| OVERALL LENGTH | 0.450 INCHES MAXIMUM |
| OVERALL WIDTH | 0.667 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |