NSN 5961-00-043-4110

Part Details | TRANSISTOR

5961-00-043-4110 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N2410, RELEASE3768, 2N2410, 2N2410, 2N2410, 2N2410, 5961-00-043-4110, 00-043-4110, 5961000434110, 000434110

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 01, 196100-043-411020588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-043-4110
Part Number Cage Code Manufacturer
2N2410K0577BRITISH SAROZAL LTD
RELEASE376880131ELECTRONIC INDUSTRIES ASSOCIATION
2N241080131ELECTRONIC INDUSTRIES ASSOCIATION
2N241004713FREESCALE SEMICONDUCTOR, INC.
2N241014936GENERAL SEMICONDUCTOR INC
2N241001295TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS
Technical Data | NSN 5961-00-043-4110
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAC800.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB800.0 MILLIWATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
MOUNTING METHOD TERMINAL
TERMINAL LENGTH1.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.200 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.260 INCHES MAXIMUM
OVERALL DIAMETER0.370 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA80131-RELESE3768 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION